GaN-Based Schottky Varactors for High-Power RF Applications
نویسندگان
چکیده
منابع مشابه
Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
Motivation AlGaN/GaN HEMT rf transistors are rapidly developing due to their high output power density, high operation voltage and high input impedance. Ni-based gate metallization is widely used to form the Schottky gate contacts. However, temperature and electric field levels are higher in AlGaN/GaN compared to traditional III-Vs and therefore the diffusion of Ni into AlGaN/GaN constitutes a ...
متن کاملNon-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کامل10.3 Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides sealing of the semiconductor. Sputtering is the enabling technology that provides low stress iridium contacts from low damage processing. Patterning of the gate contact is achieved by a subtractive meth...
متن کاملCapabilities of GaN Schottky Multipliers for LO Power Generation at Millimeter-Wave Bands
Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands due to a much better power handling c...
متن کاملThe Dawn of the New RF-HySIC Semiconductor Integrated Circuits: An Initiative for Hybrid ICs Consisting of Si and Compound Semiconductors
Abstract The concept, state of the art, and future development directions of hybrid semiconductor integrated circuits (HySICs), which combine RF-CMOS ICs with compound semiconductor monolithic microwave integrated circuits (MMICs) are described in this paper, taking up recent wireless technologies as example applications. It is shown that ICs with superior function can be designed by mixing the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008